Tunable CMOS Delay Gate With Improved Matching Properties
نویسندگان
چکیده
منابع مشابه
Ultrafast CMOS inverter with 4.7 ps gate delay fabricated on 90 nm SOI technology - Electronics Letters
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ژورنال
عنوان ژورنال: IEEE Transactions on Circuits and Systems I: Regular Papers
سال: 2014
ISSN: 1549-8328,1558-0806
DOI: 10.1109/tcsi.2014.2312491